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n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 1 rf device data freescale semiconductor, inc. mmg3002nt1 40--3600 mhz, 20 db 21 dbm ingap hbt heterojunction bipolar transistor technology (ingap hbt) broadband high linearity amplifier the mmg3002nt1 is a general purpose amplifier that is internally input and output matched. it is designed for a broad range of class a, small--signal, high linearity, general pur pose applications. it is suitable for applications with frequencies from 40 to 3600 mhz such as cellular, pcs, bwa, wll, phs, catv, vhf, uhf, umts and general small--signal rf. features ? frequency: 40--3600 mhz ? p1db: 21 dbm @ 900 mhz ? small--signal gain: 20 db @ 900 mhz ? third order output intercept point: 37.5 dbm @ 900 mhz ? single voltage supply ? internally matched to 50 ohms ? cost--effective sot--89 surface mount package ? in tape and reel. t1 suffix = 1000 units, 12 mm tape width, 7 inch reel. 1 2 3 case 1514--02, style 1 sot--89 plastic table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small--signal gain (s21) g p 20 18 14.5 db input return loss (s11) irl -- 1 6 -- 2 6 -- 1 6 db output return loss (s22) orl -- 1 2 -- 8 -- 1 1 db power output @ 1db compression p1db 21 21 18.5 dbm third order output intercept point oip3 37.5 36 32 dbm 1. v cc =5.2vdc,t a =25 c, 50 ohm system. table 2. maximum ratings rating symbol value unit supply voltage v cc 7 v supply current i cc 400 ma rf input power p in 12 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 118 c, 5.2 vdc, 110 ma, no rf applied r jc 46.5 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mmg3002nt1 rev. 10, 2/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2004--2008, 2012. a ll rights reserved.
n o tre co mmended f o rnewde s i gn not recommended for new desig n 2 rf device data freescale semiconductor, inc. mmg3002nt1 table 4. electrical characteristics (v cc = 5.2 vdc, 900 mhz, t a =25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 19.3 20 ? db input return loss (s11) irl ? -- 1 6 ? db output return loss (s22) orl ? -- 1 2 ? db power output @ 1db compression p1db ? 21 ? dbm third order output intercept point oip3 ? 37.5 ? dbm noise figure nf ? 4.2 ? db supply current (1) i cc 95 110 125 ma supply voltage (1) v cc ? 5.2 ? v 1. for reliable operation, the juncti on temperature should not exceed 150 c.
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 3 rf device data freescale semiconductor, inc. table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test conditions/test methodology class human body model (per jesd 22--a114) 1b machine model (per eia/jesd 22--a115) a charge device model (per jesd 22--c101) iv table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 1 260 c figure 1. functional diagram 3 2 1 2
n o tre co mmended f o rnewde s i gn not recommended for new desig n 4 rf device data freescale semiconductor, inc. mmg3002nt1 50 ohm typical characteristics 10 25 0 t c =85 c f, frequency (ghz) figure 2. small--signal gain (s21) versus frequency 20 15 1234 g p , small--signal gain (db) 25 c -- 4 0 c 4 -- 4 0 0 0 s22 f, frequency (ghz) figure 3. input/output return loss versus frequency s11 -- 1 0 -- 2 0 -- 3 0 123 s11, s22 (db) 22 9 23 10 p out , output power (dbm) figure 4. small--signal gain versus output power 21 19 17 15 13 12 14 16 g p , small--signal gain (db) 900 mhz 11 18 3500 mhz, c5 = 0.1 pf 2140 mhz 3.5 3 2.5 2 1.5 1 0.5 17 24 23 22 20 18 f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 21 19 5.4 0 160 4.6 v cc , collector voltage (v) figure 6. collector current versus collector voltage 80 60 20 4.7 5.1 5.2 i cc , collector current (ma) 40 4.8 4.9 5 5.3 4 27 42 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 39 36 33 30 123 v cc =5.2vdc 100 khz tone spacing oip3, third order output intercept point (dbm) 20 140 120 100 v cc =5.2vdc 2600 mhz v cc =5.2vdc v cc =5.2vdc v cc =5.2vdc
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics 27 42 5 v cc , collector voltage (v) figure 8. third order output intercept point versus collector voltage 39 36 33 30 oip3, third order output intercept point (dbm) 5.1 5.2 5.4 5.3 f = 900 mhz 100 khz tone spacing 100 -- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0 35 41 t, temperature ( _ c) figure 9. third order output intercept point versus case temperature 40 39 38 37 oip3, third order output intercept point (dbm) 36 figure 10. third order intermodulation distortion versus output power p out , output power (dbm) imd, third order intermodulation d istortion (dbc) 21 5791113 -- 8 0 -- 3 0 -- 5 0 -- 6 0 -- 7 0 v cc =5.2vdc f = 900 mhz 100 khz tone spacing -- 4 0 15 150 10 2 10 5 120 figure 11. mttf versus junction temperature 10 3 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v cc =5.2vdc,i cc =110ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency 6 4 2 123 nf, noise figure (db) 0.5 1.5 2.5 3.5 19 -- 7 0 -- 2 0 9 p out , output power (dbm) figure 13. single--carrier w--cdma adjacent channel power ratio versus output power -- 3 0 -- 4 0 -- 5 0 -- 6 0 17 15 13 11 acpr, adjacent channel power ratio (dbc) v cc =5.2vdc, f = 900 mhz 100 khz tone spacing 8 vdc supply with 25 dropping resistor 17 19 10 4 v cc =5.2vdc v cc = 5.2 vdc,f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 8.5 d b @ 0.01% pr obabilit y( ccdf)
n o tre co mmended f o rnewde s i gn not recommended for new desig n 6 rf device data freescale semiconductor, inc. mmg3002nt1 50 ohm application circuit: 40--800 mhz figure 14. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 15. s21, s11 and s22 versus frequency -- 4 0 30 0 f, frequency (mhz) s22 200 400 600 800 20 10 0 -- 1 0 -- 2 0 -- 3 0 figure 16. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 mmg30xx rev 2 v cc =5.2vdc table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 0.01 f chip capacitors c0603c103j5rac kemet c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet l1 470 nh chip inductor bk2125hm471--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer table 9. supply voltage versus r1 values supply voltage 6 7 8 9 10 11 12 v r1 value 7.3 16 25 35 44 53 62 ? note: to provide v cc = 5.2 vdc and i cc = 110 ma at the device.
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 7 rf device data freescale semiconductor, inc. 50 ohm application circuit: 800--3400 mhz figure 17. 50 ohm test circuit schematic rf output rf input v supply c3 c4 z1 z2 c1 z5 c2 r1 l1 v cc z4 z3 dut figure 18. s21, s11 and s22 versus frequency -- 3 0 30 f, frequency (mhz) s22 1200 20 10 0 -- 1 0 -- 2 0 figure 19. 50 ohm test circuit component layout c1 l1 c2 r1 c4 c3 z1, z5 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 1600 800 2000 2400 2800 3200 3600 mmg30xx rev 2 v cc =5.2vdc table 10. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 150 pf chip capacitors c0603c151j5rac kemet c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet l1 56 nh chip inductor hk160856nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer
n o tre co mmended f o rnewde s i gn not recommended for new desig n 8 rf device data freescale semiconductor, inc. mmg3002nt1 50 ohm application circuit: 3400--3600 mhz c1 l1 c2 r1 c5 c4 c3 3700 3200 3300 3800 figure 20. 50 ohm test circuit schematic figure 21. s21, s11 and s22 versus frequency f, frequency (mhz) figure 22. 50 ohm test circuit component layout -- 3 0 20 s22 10 0 -- 1 0 -- 2 0 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 c4 z1 z2 c1 z6 c2 r1 l1 v cc z5 z3 dut z1, z6 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.086 x 0.058 microstrip z4 0.085 x 0.058 microstrip z5 0.404 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 3400 3500 3600 z4 c5 mmg30xx rev 2 v cc =5.2vdc table 11. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 150 pf chip capacitors c0603c151j5rac kemet c3 0.1 f chip capacitor c0603c104j5rac kemet c4 1 f chip capacitor c0603c105j5rac kemet c5 (1) 0.1 pf chip capacitor 06035j0r1bs avx l1 39 nh chip inductor hk160839nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies.
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 9 rf device data freescale semiconductor, inc. 50 ohm typical characteristics table 12. common emitter s--parameters (v cc =5.2vdc,t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 100 0.05966 176.181 10.25158 174.805 0.07235 --0.722 0.04946 --167.612 150 0.07228 --178.627 9.96687 171.111 0.07071 --1.821 0.0953 --129.396 200 0.09041 151.476 10.46556 167.719 0.07464 --3.053 0.05913 --124.668 250 0.0909 149.96 10.36837 164.949 0.07424 --3.553 0.08015 --125.378 300 0.08882 145.472 10.30366 162.017 0.07406 --4.277 0.09694 --122.814 350 0.08508 140.833 10.2505 158.995 0.07407 --4.934 0.11062 --121.876 400 0.08377 136.078 10.17971 156.158 0.07405 -- 5 . 7 0.12723 --122.007 450 0.08191 131.492 10.10383 153.293 0.07365 --6.307 0.14156 --122.555 500 0.07982 125.857 10.02536 150.437 0.07358 --7.037 0.15558 --123.436 550 0.07776 120.816 9.94165 147.642 0.07346 --7.676 0.1685 --124.8 600 0.0773 115.435 9.85596 144.898 0.07336 -- 8 . 2 0.18177 --126.796 650 0.07677 110.371 9.76098 142.109 0.07321 --8.911 0.19472 --128.506 700 0.07664 104.874 9.6623 139.374 0.07301 --9.464 0.20662 --130.47 750 0.07628 100.112 9.56168 136.692 0.0729 --10.069 0.21833 --132.663 800 0.07619 95.73 9.45426 134.024 0.07275 --10.618 0.22977 --134.835 850 0.07601 91.72 9.34921 131.391 0.07273 --11.184 0.24125 --137.084 900 0.07567 87.313 9.23967 128.792 0.07257 --11.821 0.25232 --139.685 950 0.07642 83.036 9.13144 126.149 0.07238 --12.312 0.26303 --142.257 1000 0.07619 80.021 9.01205 123.659 0.07228 --12.88 0.27394 --144.736 1050 0.07666 76.201 8.90327 121.137 0.07218 --13.474 0.28332 --147.346 1100 0.07678 73.008 8.78013 118.657 0.07202 --13.93 0.29417 --150.042 1150 0.07673 70.68 8.66342 116.191 0.0719 --14.519 0.30394 --152.767 1200 0.07674 68.773 8.53991 113.779 0.07178 --15.062 0.31393 --155.358 1250 0.07628 66.216 8.42251 111.392 0.07176 --15.551 0.32286 --157.992 1300 0.07618 64.635 8.30514 109.034 0.07164 --16.115 0.33259 --160.483 1350 0.07454 62.959 8.18109 106.673 0.07149 --16.539 0.34127 --162.981 1400 0.07373 60.65 8.06498 104.367 0.07152 --17.114 0.34972 --165.377 1450 0.0724 59.062 7.94403 102.073 0.07137 --17.565 0.35931 --167.823 1500 0.06466 48.656 7.85198 99.72 0.0715 --18.187 0.35762 --170.82 1550 0.0646 44.563 7.73641 97.503 0.07167 --18.755 0.36484 --172.845 1600 0.06495 39.856 7.63068 95.372 0.07161 --19.217 0.37158 --174.751 1650 0.0657 35.953 7.52257 93.247 0.07165 --19.614 0.37821 --176.697 1700 0.06599 31.949 7.43591 91.089 0.07171 --20.239 0.38558 --178.85 1750 0.0666 28.693 7.31976 88.981 0.07168 --20.731 0.39036 179.588 1800 0.06649 25.448 7.22121 86.872 0.07176 --21.241 0.39732 177.775 1850 0.06637 22.687 7.11782 84.83 0.07181 --21.685 0.40211 175.992 1900 0.06563 19.369 7.01794 82.771 0.07188 --22.233 0.40749 174.294 1950 0.06514 15.516 6.91688 80.824 0.07197 --22.678 0.41306 172.684 2000 0.0641 13.294 6.82126 78.739 0.07217 --23.218 0.41825 170.97 2050 0.06323 9.843 6.72865 76.797 0.07214 --23.632 0.42367 169.372 2100 0.06288 6.976 6.63794 74.849 0.07234 --24.15 0.42905 167.644 2150 0.06195 4.218 6.55483 72.888 0.07244 --24.689 0.43442 166.014 2200 0.06084 2.075 6.46275 70.939 0.07265 --25.273 0.43857 164.274 2250 0.05942 -- 0 . 3 6.37821 69.013 0.07275 --25.755 0.44419 162.598 (continued)
n o tre co mmended f o rnewde s i gn not recommended for new desig n 10 rf device data freescale semiconductor, inc. mmg3002nt1 50 ohm typical characteristics table 12. common emitter s--parameters (v cc =5.2vdc,t a =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2300 0.05808 --2.187 6.29055 67.098 0.07295 --26.316 0.44756 160.879 2350 0.05526 --4.038 6.20851 65.179 0.07318 --26.813 0.45231 159.11 2400 0.05338 --6.096 6.12256 63.315 0.07337 --27.387 0.45571 157.425 2450 0.05054 --7.643 6.04461 61.45 0.07359 --27.903 0.46063 155.679 2500 0.04768 --10.036 5.96594 59.564 0.07386 --28.462 0.46419 153.884 2550 0.04494 --12.811 5.88833 57.733 0.07416 --29.19 0.4681 152.005 2600 0.04239 --14.731 5.81782 55.868 0.07435 --29.754 0.47249 150.142 2650 0.0393 --16.676 5.74121 53.98 0.07445 --30.312 0.47601 148.126 2700 0.03707 --20.889 5.66538 52.04 0.0748 --31.053 0.47991 146.214 2750 0.0346 --21.7 5.59155 50.247 0.07499 --31.654 0.48371 144.147 2800 0.03163 --24.056 5.51967 48.401 0.07519 --32.344 0.48777 142.183 2850 0.02869 --26.756 5.44631 46.54 0.0754 --33.048 0.49144 140.072 2900 0.02667 --28.324 5.37422 44.74 0.07563 --33.749 0.4961 138.081 2950 0.02324 --29.457 5.30336 42.914 0.07577 --34.431 0.50017 136.001 3000 0.02069 --34.403 5.23613 41.138 0.07596 --35.209 0.5054 133.872 3050 0.01861 --37.625 5.16698 39.322 0.07624 --35.917 0.50901 131.91 3100 0.01563 --41.101 5.09908 37.495 0.07648 --36.648 0.51431 129.855 3150 0.01407 --49.967 5.03148 35.696 0.0766 --37.389 0.51844 127.844 3200 0.01296 --54.052 4.96452 33.935 0.07684 --38.12 0.52333 125.818 3250 0.01129 --59.44 4.89769 32.159 0.07708 --38.894 0.52814 123.86 3300 0.01031 --67.904 4.83271 30.407 0.07721 --39.663 0.53368 121.891 3350 0.00977 --71.657 4.76883 28.702 0.07742 --40.479 0.53765 120.096 3400 0.00821 --77.779 4.707 26.984 0.07764 --41.116 0.54299 118.206 3450 0.0076 --90.054 4.64886 25.288 0.07774 --41.964 0.54702 116.357 3500 0.0074 --97.151 4.59041 23.575 0.07797 --42.707 0.55121 114.75 3550 0.00666 --114.876 4.5319 21.885 0.07819 --43.538 0.55593 113.11 3600 0.00749 --127.171 4.47455 20.231 0.07843 --44.293 0.55935 111.522
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 11 rf device data freescale semiconductor, inc. 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diameter figure 23. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
n o tre co mmended f o rnewde s i gn not recommended for new desig n 12 rf device data freescale semiconductor, inc. mmg3002nt1 package dimensions
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 13 rf device data freescale semiconductor, inc.
n o tre co mmended f o rnewde s i gn not recommended for new desig n 14 rf device data freescale semiconductor, inc. mmg3002nt1
n o tre co mmended f o rnewde s i gn not recommended for new desig n mmg3002nt1 15 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 7 mar. 2007 ? corrected and updated part numbers in tables 8, 10 and 11, component designations and values, to rohs compliant part numbers, p. 6--8 8 july 2007 ? replaced case outline 1514--01 with 1514--02, issue d, p. 1, 12--14. case updated to add missing dimension for pin 1 and pin 3. 9 mar. 2008 ? removed footnote 2, continuous voltage and current applied to device, from table 2, maximum ratings, p. 1 ? corrected fig. 13, single--carrier w--cdma adjacent channel power ratio versus output power y--axis (acpr) unit of measure to dbc, p. 5 ? corrected s--parameter table frequency column label to read ?mhz? versus ?ghz? and corrected frequency values from ghz to mhz, p. 9, 10 10 feb. 2012 ? corrected temperature at which thetajc is measured from 25 cto118 c and added ?no rf applied? to thermal characteristics table to indicate that ther mal characterization is performed under dc test with no rf signal applied, p. 1 ? table 6, esd protection characte rization, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 3 ? removed i cc bias callout from applicable graphs and tabl e 12, common emitter s--parameters heading as bias is not a controlled value, p. 4--10 ? added .s2p file availability to product software, p. 15
n o tre co mmended f o rnewde s i gn not recommended for new desig n 16 rf device data freescale semiconductor, inc. mmg3002nt1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004--2008, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mmg3002nt1 rev. 10, 2/2012

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